| PART |
Description |
Maker |
| BTA15 BTB15 |
Discrete Triacs(Non-Isolated/Isolated)
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| 2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HI1-0507A2 HI1-0506A5 HI1-0507A5 HI1-0506A2 HI3-05 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0402-5 90; Contact Mating Area Plating: Tin
Interface IC 接口IC
|
Intersil, Corp.
|
| VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻，高功率-卓越的长期稳
Resistors, fixed discrete
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| 2SJ226 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0503-0 00; No. of Positions: 8; Connector Type: Wire
Very High-Speed Switching Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SJ208 2SJ208-T2 2SJ208-T1 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 00; No. of Positions: 6; Connector Type: Wire
P-CHANNEL MOS FET FOR SWITCHING
|
NEC Corp.
NEC[NEC]
|
| HGT1S7N60A4DS9A |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0692-5 53; Contact Mating Area Plating: Gold 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|4A一（c）|63AB
|
Intersil, Corp.
|
| MBRD320 MBRD330 MBRD340 MBRD320TR MBRD340PBF |
Schottky (Diodes & Rectifiers) 3.0 Amp 40 Volt
SCHOTTKY RECTIFIER
30V 3A Schottky Discrete Diode in a D-Pak package
40V 3A Schottky Discrete Diode in a D-Pak package
20V 3A Schottky Discrete Diode in a D-Pak package
|
Vishay Semiconductors
IRF[International Rectifier]
|
| AN296 |
USING THE Si3400 AND Si3401 POE PD CONTROLLERS IN ISOLATED AND NON-ISOLATED DESIGNS
|
Silicon Laboratories
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
